Prognostics of Interconnect Degradation using RF Impedance Monitoring and Sequential Probability Ratio Test
Volume 6, Number 5, September 2010 - Paper 4 - pp. 443-452
DAEIL KWON1, MICHAEL H. AZARIAN1, and MICHAEL PECHT1, 21 Center for Advanced Life Cycle Engineering (CALCE), University of Maryland,
College Park, MD 20742
2 Prognostics and Health Management Center, City University of Hong Kong
Kowloon, Hong Kong
(Received on September 30, 2009, revised on March 23, 2010)
For electronic products, interconnect failures may occur due to mechanisms such as fatigue, creep, corrosion, and mechanical over-stress. Regardless of the failure mechanism, interconnect degradation often starts at a surface and propagates inward. DC resistance, which has been used by the electronics industry to monitor the reliability of board level interconnects, does not offer an adequate means to predict an impending failure. However, RF impedance does respond to the early stages of interconnect degradation due to the skin effect, and thus can provide a failure precursor for an interconnect.
Click here to download the paper.
Please note : You will need Adobe Acrobat viewer to view the full articles.